The Open Applied Physics Journal

2009, 2 : 20-22
Published online 2009 April 10. DOI: 10.2174/1874183500902010020
Publisher ID: TOAPJ-2-20

Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si

A.F. Orlov , L.A. Balagurov , I.V. Kulemanov , Yu.N. Parkhomenko , A.V. Kartavykh , V.V. Saraikin , Yu.A. Agafonov and V.I. Zinenko.
State Institute for Rare Metals, B.Tolmachevsky lane, 119017 Moscow, Russia;.

ABSTRACT

Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted with Mn has been studied. Czochralski Si wafers both n- and p-type, of high- and low-resistivity, as well as a float zone Si were implanted with impurity fluencies of (1 - 5) x 10-16 cm-2. The Mn impurity was found to compensate acceptors in a high-resistivity p-Si and donors in a low-resistivity n-Si. Only the small part of Mn ions in Si apparently incorporates into the Si crystal lattice, occupies the interstitial sites and the appropriate energy levels (Mni) -/0 and (Mni)+/++ equal to Ec – 0.12 eV for n-type Si and Ev + 0.32 eV for p-type Si, respectively, are activated after vacuum annealing.

PACS: 61.72.uf; 71.55.Cu; 72.20.Jv

Keywords:

Ferromagnetic Si, implantation of Mn, spreading resistance, energy levels..