The Open Condensed Matter Physics Journal

2009, 2 : 9-14
Published online 2009 February 17. DOI: 10.2174/1874186X00902010009
Publisher ID: TOCMPJ-2-9

RESEARCH ARTICLE
 Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

Anita R. Warrier, * , Teny Theresa John , K.P. Vijayakumar, * and C. Sudha Kartha
Department of Physics, Cochin University of Science and Technology, Cochin-682 022, India

* Address correspondence to these authors at the Department of Physics, Cochin University of Science and Technology, Cochin- 682 022, India; Tel: + 91 484-257-7103; Fax: +91-484-257-7595; E-mails: , kpv@cusat.ac.in

ABSTRACT

Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Successive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality β-Indium sulfide (In2S3) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, indium chloride (InCl3) and indium nitrate (In(NO3)3) and post deposition annealing were also studied. Films fabricated with In(NO3)3 showed good crystallinity without any post deposition annealing while films prepared using InCl3 were crystalline only when annealed at 4000C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposition conditions

Keywords:

Indium sulfide, SILAR, optical absorption, photosensitivity, annealing, X-ray diffraction.