The Open Electrical & Electronic Engineering Journal

2007, 1 : 51-53
Published online 2007 December 14. DOI: 10.2174/1874129000701010051
Publisher ID: TOEEJ-1-51

Long Term Transients in MOSFET 1/f Noise with Switched Bias

M.Y. Louie and L. Forbes
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331- 5501, USA.

ABSTRACT

Long term time dependent transients in l/f noise have been observed and are reported on NMOS transistors operating with switched gate bias. The results are interpreted as a modification of the time dependence of random telegraph signals. The results have important implications in the understanding of the nature of l/f noise and in the understanding the effect of l/f noise in switched capacitor and RF circuits with large amplitude switching gate voltages.

Keywords:

Low frequency noise, noise transient analysis, phase noise.