The Open Electrical & Electronic Engineering Journal

2008, 2 : 1-7
Published online 2008 January 4. DOI: 10.2174/1874129000802010001
Publisher ID: TOEEJ-2-1

Status of the Emerging InAlN/GaN Power HEMT Technology

F. Medjdoub , J.F. Carlin , C. Gaquière , N. Grandjean and E. Kohn
Institute of Electron Devices and Circuits, Albert Einstein Allee 45, University of Ulm, Germany.

ABSTRACT

The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.