The Open Electrical & Electronic Engineering Journal

2014, 8 : 306-315
Published online 2014 December 31. DOI: 10.2174/1874129001408010306
Publisher ID: TOEEJ-8-306

A Power-Gating Scheme for MCML Circuits with Separable-Sizing Sleep Transistors

Yeliang Geng , Jianping Hu and Kaiyu Zou
818 Fenghua Road, Ningbo, China. Postcard: 315211.

ABSTRACT

Power-efficient designs are essential for micro-power sensor systems. This paper presents a power-gating scheme for MCML (MOS Current Mode Logic) circuits with separable-sizing sleep transistors. In the proposed scheme, two high-threshold power-gating transistors are inserted between load transistors and outputs of the MCML circuits. The widths and lengths of sleep transistors in power-gated blocks are separately adjusted, which are independent of the bias circuit. Basic cells and a 1-bit full adder are used to verify the correctness of the proposed scheme. The power consuming comparisons between conventional MCML and proposed power-gating MCML circuits are carried out. The 1-bit MCML full adder based on the proposed scheme nearly saves 36% of energy dissipations with respect to no-power-gating MCML one, for a power-gating activity of 0.6. Moreover, the proposed power-gating MCML circuit also has a great advantage in power dissipations in high frequency regions compared with the power-gating static CMOS ones. The power consumption of the MCML 1-bit full adder based on the proposed scheme is 63.2%, 44.8%, and 36.97% compared with the powergating static CMOS one when the operating frequency is 1GHz, 1.5GHz, and 2GHz, respectively.

Keywords:

Energy efficient design, low power electronics, micro-power systems, MOS current mode logic, power-gating scheme.