The Open Materials Science Journal
2017, 11 : 38-46Published online 2017 September 22. DOI: 10.2174/1874088X01711010038
Publisher ID: TOMSJ-11-38
RESEARCH ARTICLE
Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs
* Address correspondence to this author at the College of Electronic and Information Engineering, Ankang University, AnKang 725000, P.R. China; Tel: ????????; E-mail: jiaxiaofei-ab@163.com
ABSTRACT
Objective and Method:
In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated.
Result:
The result we obtained which considered the combination of the two effects is in good agreement with experimental studies in the research papers, thus getting a theoretical explanation for the variation of the suppression factor with the bias voltage. Meanwhile, the suppression factor model is suitable for nano-MOSFET.