The Open Materials Science Journal

2013, 7 : 29-32
Published online 2013 October 31. DOI: 10.2174/1874088X01307010029
Publisher ID: TOMSJ-7-29

Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction

Xiong Chao , Chen Lei and Yuan Hongchun
School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu 213002, China.

ABSTRACT

The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.

Keywords:

Heterojunction diode, p-CuSCN/n-Si, the current transport mechanism.