The Open Materials Science Journal

2015, 9 : 91-94
Published online 2015 August 27. DOI: 10.2174/1874088X01509010091
Publisher ID: TOMSJ-9-91

Influence of Annealing on ZnCuo (X=6.27%) Thin Films by Sol-gel Method

Wang Xiaoyang , Ren Keming and Zhou Zhen
College of Mathematics and Physics, TaiZhou University, 225300, Tai Zhou, China.

ABSTRACT

The Zn1-xCuxO (x=6.27%) films under different annealing were prepared by the sol-gel method on grass. Using the X-ray diffraction (XRD), atomic force microscopy to study the influence of annealing on the microstructure and surface morphology of the film, the result of which shows that the annealing temperature did not change the wurtzite structure of ZnO and the film density under 400 degree annealing is evened out and is the best one.In the transmission spectra of zinc oxide (ZnO) films, the transmittance in the visible light range changes little with the shift of the annealing temperature, and the absorption edge assumes a hypsochromic shift. From the point of light spectrum at room temperature, annealing temperature changes photoluminescence peak position, not significantly changing the luminescence peak position of ZnO film, but make zinc deficiency increased with annealing and the obvious enhancement in the visible region photoluminescence peak.

Keywords:

Annealing, photoluminescence, sol-gel method, ZnO thin films.