The Open Nanoscience Journal

2009, 3 : 1-11
Published online 2009 May 8. DOI: 10.2174/1874140100903010001
Publisher ID: TONANOJ-3-1

III-Nitride QD Lasers

H. Al-Husseini , Amin H. Al-Khursan and S. Y. Al-Dabagh
Physics Department, Science College, Thi-Qar University,Nasinya, Iraq

ABSTRACT

III-Nitrides QD lasers are studied in detail. Two types of QD structures are considered, GaN/AlxGa1-xN/AlN and InxGa1-xN/ In0.04Ga0.96N /GaN. Effects of: QD size; QD and WL composition; and doping are studied through the calculations of gain, threshold current, and intensity modulation bandwidth. It is shown that GaN QDs are less sensitive to size fluctuations. Bandwidth increases with doping and reducing QD size. The study covers approximately (300-600 nm) wavelength range.