The Open Optics Journal

2009, 3 : 70-73
Published online 2009 September 15. DOI: 10.2174/1874328500903010070
Publisher ID: TOOPTSJ-3-70

Photoluminescence of the GaAs Superlattices with Quasi-Delta-Doped Layers

Zvonkov B.N. , Aleshkin V.Ya. , Gavrilenko V.I. , Kononenko V.K. , Kunert H.W. , Morozov S.V. and Ushakov D.V.
Stepanov Institute of Physics NASB, Independence Ave., 68, 220072 Minsk, Belarus.

ABSTRACT

The GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-d-doping. Photoluminescence spectra measured at 4.2 K display well-distinguished peaks, which coincide with transitions between quantizied levels of electrons and holes in the potential relief quantum wells. To describe observed phenomena in quasi-d-doped superlattices a theory is developed with taking into account existing tails of the density of states.

Keywords:

GaAs, superlattice, δ-doping.