The Open Surface Science Journal

2015, 6 : 1-5
Published online 2015 March 10. DOI: 10.2174/1876531901506010001
Publisher ID: TOSURSJ-6-1

Effect of Weak Magnetic Field Treatment on Optical Properties of Epitaxial GaN Films

R.A. Red´ko , R.V. Konakova , V.V. Milenin , S.M. Red’ko , V.V. Shvalagin , N.S. Zayats and Yu. N. Sveshnikov
V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, 41 Nauky Pr., 03028 Kyiv, Ukraine.

ABSTRACT

The results of optical studies of the effect of pulsed magnetic field (B = 60 mT, τ = 1.2 ms, t = 5 min) on the structural perfection and recombination properties of epitaxial GaN films grown on sapphire are presented. Nonmonotonic changes in the spectral dependence of transmittance and photoluminescence were detected for GaN films after exposure to magnetic field. They occurred during several days, with a maximum deviation from the initial values on the 12th day. The observed effect is presumably related to the magnetic field-induced changes in parameters of the surfaces and interfaces of epitaxial films.

Keywords:

Optical transmittance , photoluminescence, weak magnetic field.